| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To easily remove the limit on the shifter width, prevent the narrowing of a gate wiring pattern, wire breaking and retraction, and distortion of a gate electrode pattern, and facilitate the shrinking processing of the device area, and improve the uniformity of the size of an extremely fine gate. <P>SOLUTION: Upon forming a gate composed of a gate electrode and a gate wiring, only the gate electrode pattern 12 is formed by a double exposure processing using a first mask 1 and a second mask 2, and thereafter the gate wiring pattern 13 is formed by an exposing processing using a third mask 3. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
