METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE TO IMPROVE ELECTRIC CONDUCTIVITY

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent diffusion of copper to an insulating layer by forming a barrier layer having an oxidized surface within a trench and forming further an intermediate layer and a seed layer thereon. CONSTITUTION: An insulating layer is formed on a substrate(100). An insulating layer pattern having an opening part is formed by patterning the insulating layer. The first barrier layer is formed on the inside of the opening part and an upper surface of the insulating layer pattern. A barrier layer having an oxidized surface is formed by oxidizing the barrier layer. An intermediate layer having uniform thickness is formed on the barrier layer. A metal line(160a) is formed within the opening part having the intermediate layer.