METHOD FOR FORMING FINE PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element. SOLUTION: After an ArF resist pattern is formed, the space and opening size of the pattern are reduced by temporarily reducing Tgof the resist pattern by the irradiation of a VUV excimer laser or of the E beam irradiation during the thermal treatment of the resist pattern. Due to this, the process yield and reliability of the semiconductor element can be improved because the aperture size of the fine resist pattern can be reduced while improving the CD stability and reproducibility. COPYRIGHT: (C)2004,JPO&NCIPI