发明名称 Method of generating optical assist features for two-mask exposure lithography
摘要 The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
申请公布号 US6800406(B2) 申请公布日期 2004.10.05
申请号 US20030622995 申请日期 2003.07.18
申请人 INTEL CORPORATION 发明人 TEJNIL EDITA
分类号 G03F1/00;G03F1/14;(IPC1-7):G03F9/00 主分类号 G03F1/00
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