发明名称 |
Method of generating optical assist features for two-mask exposure lithography |
摘要 |
The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.
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申请公布号 |
US6800406(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20030622995 |
申请日期 |
2003.07.18 |
申请人 |
INTEL CORPORATION |
发明人 |
TEJNIL EDITA |
分类号 |
G03F1/00;G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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