发明名称 |
Method for phase shift mask design, fabrication, and use |
摘要 |
A system and method of strong phase-shifting a beam from an actinic light source in a lithographic process includes focusing a beam from the electromagnetic beam source onto a mask adapted to selectively phase-shift at least a portion of the beam according to a predetermined pattern. The beam is passed from the actinic light source through the mask producing a phase-shifted beam, and the phase-shifted beam is directed at a substrate such as a semiconductor wafer adapted to be selectively etched according to the predetermined pattern. The strong phase-shift serves to substantially eliminate zero-order light in the phase-shifted beam. Strong phase-shift mask techniques, through a two electromagnetic beam interference imaging process, are known in the art of microlithography to form imaging results for features of a size well below the limit of conventional prior art imaging.
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申请公布号 |
US6800401(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20010843622 |
申请日期 |
2001.04.26 |
申请人 |
PETERSEN ADVANCED LITHOGRAPHY, INC. |
发明人 |
PETERSEN JOHN S. |
分类号 |
G03F1/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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