SEMICONDUCTOR DEVICE TO IMPROVE DRIVING ABILITY IN UNIT AREA

摘要

PURPOSE: A semiconductor device is provided to improve driving ability in a unit area by using a method except a minimal machining method for increasing the depth of a roughness part of a semiconductor device. CONSTITUTION: A concave part(6) installed in the length direction of a channel for linearly connecting a high density region is formed in a plurality of channel width directions on the surface part of a semiconductor substrate between two source/drain regions(1) separately formed in the surface of the semiconductor substrate. An insulation layer is formed on the surface part including the concave part between the source/drain regions. A gate electrode is formed on the insulation layer.