发明名称 |
CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, PHASE MODULATION DEVICE AND DISPLAY APPARATUS TO FORM CRYSTALLIZED SEMICONDUCTOR LAYER OF LARGE DIAMETER |
摘要 |
<p>PURPOSE: A crystallization apparatus is provided to form a crystallized semiconductor layer of a large diameter by laterally growing a crystal from a crystal nucleus. CONSTITUTION: The phase of outgoing light with respect to incident light varies with a position in a phase modulation device(1). An illumination system(2) generates the incident light incident upon the phase modulation device. An open-phase optical system(3) is installed in the outgoing part of the phase modulation device. A stage supports a substrate having a non-single crystalline semiconductor layer installed in the outgoing part of the open-phase optical system. The phase modulation device has a phase distribution that is based upon a phase modulation unit optically smaller than the radius of a point-phase distribution range of the open-phase optical system when converted into an open-phase surface of the open-phase optical system.</p> |
申请公布号 |
KR20040093386(A) |
申请公布日期 |
2004.11.05 |
申请号 |
KR20040016754 |
申请日期 |
2004.03.12 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. |
发明人 |
MATSUMURA MASAKIYO;TANIGUCHI YUKIO |
分类号 |
H01L29/786;B23K26/06;B23K26/067;B23K26/073;H01L21/20;(IPC1-7):H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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