发明名称 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, PHASE MODULATION DEVICE AND DISPLAY APPARATUS TO FORM CRYSTALLIZED SEMICONDUCTOR LAYER OF LARGE DIAMETER
摘要 <p>PURPOSE: A crystallization apparatus is provided to form a crystallized semiconductor layer of a large diameter by laterally growing a crystal from a crystal nucleus. CONSTITUTION: The phase of outgoing light with respect to incident light varies with a position in a phase modulation device(1). An illumination system(2) generates the incident light incident upon the phase modulation device. An open-phase optical system(3) is installed in the outgoing part of the phase modulation device. A stage supports a substrate having a non-single crystalline semiconductor layer installed in the outgoing part of the open-phase optical system. The phase modulation device has a phase distribution that is based upon a phase modulation unit optically smaller than the radius of a point-phase distribution range of the open-phase optical system when converted into an open-phase surface of the open-phase optical system.</p>
申请公布号 KR20040093386(A) 申请公布日期 2004.11.05
申请号 KR20040016754 申请日期 2004.03.12
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO.,LTD. 发明人 MATSUMURA MASAKIYO;TANIGUCHI YUKIO
分类号 H01L29/786;B23K26/06;B23K26/067;B23K26/073;H01L21/20;(IPC1-7):H01L29/786 主分类号 H01L29/786
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