CAPACITOR WITH TUNNEL-TYPE STORAGE NODES AND MANUFACTURING METHOD THEREOF IMPROVING CHARGE RETENTION CAPABILITY

摘要

PURPOSE: A capacitor of a semiconductor device and a method for manufacturing the same are provided to improve charge retention capability without increasing the height of the capacitor by using a tunnel-type storage node. CONSTITUTION: A first storage node(20) is formed on a substrate(10) having a storage node contact plug(18) and a bit line(16) to connect the storage node contact plug. A capacitor oxide layer is formed on the resultant structure. A groove is formed to expose the first storage node by selectively removing the capacitor oxide layer. A tunnel-type second storage node(23) is formed to connect the first storage node through the groove, to isolate with a memory cell unit and to remove the capacitor oxide layer. A dielectric film(24) is formed at inner and outer walls of the second storage node and on the first storage node. A plate electrode(25) is formed on the dielectric film.