TFT SUBSTRATE FOR INCREASING A STORAGE CAPACITANCE WITHOUT THE REDUCTION OF THE OPENING RATIO

摘要

PURPOSE: A TFT(Thin Film Transistor) substrate is provided to increase a storage capacitance without the reduction of the opening ratio by forming a storage capacitor in not entire region but local region of the edge of the pixel electrode region. CONSTITUTION: A TFT substrate comprises a substrate(110), an active layer(110) on the substrate, a gate line(130) having a gate electrode(132), a gate insulating layer, a date line(150) having source and drain electrodes(152,154), and a pixel electrode(160) connected with the drain electrode. The pixel electrode is formed in a pixel electrode region. The TFT substrate further comprises a storage capacitor having two storage capacitance electrodes(134,156). This storage capacitor is formed in not entire region but local region of the edge of the pixel electrode.