| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for measuring the surface position of a melt during pulling up a single crystal in a process for pulling up the single crystal, being used as a material for a semiconductor, from the melt by a CZ method. SOLUTION: In the single crystal pulling up process, the surface position of the melt is measured by setting two measuring lines in an image of a fusion ring measured by two dimensional CCD camera, then detecting intersection points at both sides of respective measuring lines and the fusion ring, and calculating the center position of the single crystal, based on the intervals between the intersection points at the both sides. COPYRIGHT: (C)2005,JPO&NCIPI |
