REFLECTIVE MASK BLANK AND REFLECTIVE MASK

摘要

PROBLEM TO BE SOLVED: To provide a reflective mask blank and a reflective mask of which lowering of reflectivity is insignificant even when etching residue is present and the relation with other layers can be optimized.

SOLUTION: A reflective multilayer film 2 for reflecting exposure light and an absorber layer 4 for absorbing exposure light are provided on a substrate 1, and a buffer layer 3 for protecting the reflective multilayer film 2 when the absorber layer 4 is patterned is provided between the reflective multilayer film 2 and the absorber layer 4. The buffer layer 3 has such a complex index of refraction as the absolute value at the imaginary part thereof is small in the vicinity of a region adjacent to the reflective multilayer film 2 as compared with other parts of the buffer layer 3.

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