| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which has little characteristic defects by ion contamination and has little change with the passage of time. SOLUTION: The semiconductor device comprises an n<SP>+</SP>-type first semiconductor layer 1 and an n-type second semiconductor layer 2 formed on a principal plane of the first semiconductor layer 1. Along the periphery of the semiconductor device, a groove which reaches the n<SP>+</SP>-type first semiconductor layer 1 is formed from the surface of the n-type second semiconductor layer 2. In a surface portion of the n-type second semiconductor layer 2 which is defined by the surface of the groove and the groove itself, an insulation film 5 is formed. The insulation film 5 has a window inside the groove in the surface of the second semiconductor layer 2. A first electrode 6 is formed which forms a Schottky junction with the n-type second semiconductor layer 2 exposed on the bottom of the window. Due to a channel stopper effect, the reliable semiconductor device can be obtained which has little characteristic defects by ion contamination, has a high yield, and has little change with the passage of time. COPYRIGHT: (C)2005,JPO&NCIPI |
