| 发明名称 | Semiconductor device manufacturing method | ||
| 摘要 | A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate. | ||
| 申请公布号 | US9472391(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201414230416 | 申请日期 | 2014.03.31 |
| 申请人 | HITACHI KOKUSAI ELECTRIC INC. | 发明人 | Shimamoto Satoshi;Hirose Yoshiro;Sano Atsushi;Kamakura Tsukasa;Noda Takaaki |
| 分类号 | C23C16/32;H01L21/02;C23C16/40;C23C16/455 | 主分类号 | C23C16/32 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A semiconductor device manufacturing method, comprising: forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times, the cycle comprising: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate. | ||
| 地址 | Tokyo JP | ||