发明名称 |
Semiconductor storage device |
摘要 |
A device includes a cell array including cells. A sense node transmits logic of data stored in the cell selected by a WL and a BL. A verify read in a data program sequence includes a first read and a second read. In a time period of shifting from the first read to the second read, a charge state of the sense node is maintained. |
申请公布号 |
US9472294(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201514638534 |
申请日期 |
2015.03.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Kodama Takuyo |
分类号 |
G11C16/00;G11C16/26;G11C7/10;G11C16/04;G11C16/34 |
主分类号 |
G11C16/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor storage device comprising:
a memory cell array comprising a plurality of memory cells; a plurality of word lines connected to control gates of the memory cells; a bit line electrically connectable to the memory cells; and a sense node transmitting logic of data stored in the memory cell selected by the word line and the bit line, wherein a verify read operation in a data program sequence comprises a first read operation and a second read operation, in a time period of shifting from the first read operation to the second read operation, a charge state of the sense node is maintained, and the sense node is not precharged between the first read operation and the second read operation. |
地址 |
Minato-ku JP |