发明名称 Semiconductor storage device
摘要 A device includes a cell array including cells. A sense node transmits logic of data stored in the cell selected by a WL and a BL. A verify read in a data program sequence includes a first read and a second read. In a time period of shifting from the first read to the second read, a charge state of the sense node is maintained.
申请公布号 US9472294(B2) 申请公布日期 2016.10.18
申请号 US201514638534 申请日期 2015.03.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Kodama Takuyo
分类号 G11C16/00;G11C16/26;G11C7/10;G11C16/04;G11C16/34 主分类号 G11C16/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor storage device comprising: a memory cell array comprising a plurality of memory cells; a plurality of word lines connected to control gates of the memory cells; a bit line electrically connectable to the memory cells; and a sense node transmitting logic of data stored in the memory cell selected by the word line and the bit line, wherein a verify read operation in a data program sequence comprises a first read operation and a second read operation, in a time period of shifting from the first read operation to the second read operation, a charge state of the sense node is maintained, and the sense node is not precharged between the first read operation and the second read operation.
地址 Minato-ku JP