Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer

摘要

A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the assistance of an antiferromagnetic (AFM) pinning layer. The spin valve sensor further includes an in-stack longitudinal biasing layer structure which is magnetostatically coupled to the free layer for longitudinally biasing a magnetic moment of the free layer parallel to an air bearing surface and parallel to major planes of the layers of the sensor. The only AFM pinning layer employed is in the biasing layer structure so that when the magnetic spins of the AFM pinning layer are set the orientations of the magnetic moments of the AP pinned layer structure are not disturbed.