发明名称 |
Recognition method of a mark provided on a semiconductor device |
摘要 |
A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 mum to 50 mum. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.
|
申请公布号 |
US6869819(B2) |
申请公布日期 |
2005.03.22 |
申请号 |
US20020321629 |
申请日期 |
2002.12.18 |
申请人 |
FUJITSU LIMITED |
发明人 |
WATANABE MITSUHISA;KUMAGAYA YOSHIKAZU;TAKASHIMA AKIRA |
分类号 |
H01L21/68;G01B11/00;G01R31/26;G03F9/00;G06K9/00;H01L21/00;H01L21/50;H01L21/66;H01L21/683;H01L21/78;H01L21/784;H01L23/44;H01L23/544;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/68 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|