METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE CAPABLE OF PROTECTING ATTACK BY WET CLEANING

摘要

A method of fabricating a semiconductor device capable of protecting an attack from a wet cleaning process is provided to improve productivity by minimizing generation of defects in a semiconductor fabrication process. A plurality of conductive patterns are formed on a substrate(40) including a cell region and a peripheral circuit region. An etch stop layer(45) is formed along a profile of the conductive patterns. An SOG(Spin On Glass) layer is formed on the entire surface of the substrate. A first curing process is performed. The SOG layer is etched partially. A second curing process is performed. A photoresist pattern(51) is formed on the SOG layer. A contact hole for exposing the etch stop layer is formed by etching the SOG layer between the conductive patterns. The substrate is exposed by removing the etch stop layer from a bottom face of the contact hole. The inside of the contact hole is cleaned.