| 发明名称 |
Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber |
| 摘要 |
A layer of tungsten nitride is deposited on the upper surface of a wafer with improved adhesion. The deposition is performed by first pretreating the wafer with a hydrogen plasma prior to performing tungsten nitride deposition.
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| 申请公布号 |
US6872429(B1) |
申请公布日期 |
2005.03.29 |
| 申请号 |
US19980067429 |
申请日期 |
1998.04.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN LING;GANGULI SESHADRI;MAK ALFRED |
| 分类号 |
C23C16/02;C23C16/14;C23C16/34;C23C16/52;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/49;(IPC1-7):H05H1/24 |
主分类号 |
C23C16/02 |
| 代理机构 |
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