发明名称 |
In situ reduction of copper oxide prior to silicon carbide deposition |
摘要 |
The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.
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申请公布号 |
US6878628(B2) |
申请公布日期 |
2005.04.12 |
申请号 |
US20010975466 |
申请日期 |
2001.10.09 |
申请人 |
ASM INTERNATIONAL NV |
发明人 |
SOPHIE AUGUSTE J. L.;SPREY HESSEL;SOININEN PEKKA J.;ELERS KAI-ERIK |
分类号 |
H01L21/285;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):H01L21/44;B05D5/12 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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