发明名称 |
PRESS CONTACT TYPE SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve heat radiation performance for a larger capacity of a press contact type semiconductor device where a semiconductor element is contacted to an external connection electrode by pressure for electrical and thermal connection. SOLUTION: A plurality of semiconductor elements are sandwiched between a pair of upper and lower external connection electrodes formed of high electric/thermal conductive materials, and the pair of connection electrodes are coupled as one body through an insulating ring. Thus the connection electrode and the semiconductor element are connected by pressure. A spring for pressurizing the semiconductor element and a shrinkable heat pipe are provided in parallel between each of the semiconductor elements and one external connection electrode, so that the semiconductor element and the connection electrode are electrically and thermally connected to each other. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005101489(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20030419958 |
申请日期 |
2003.12.17 |
申请人 |
FUJI ELECTRIC HOLDINGS CO LTD |
发明人 |
TATSUKAWA MASAHIRO;SAOTOME MASANORI |
分类号 |
H01L23/34;H01L23/427;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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