发明名称 |
Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same |
摘要 |
A method and system for providing a ground strap on a semiconductor device is disclosed. The method and system comprises providing a substrate region and providing an epitaxial (EPI) layer over the substrate region. The method and system includes etching a plurality of device structures in the EPI layer and providing a slot in the semiconductor substrate that is in contact with the substrate region. Finally, the method and system includes oxidizing the slot except at the bottom of the slot and providing a metal within the slot. |
申请公布号 |
US6882053(B1) |
申请公布日期 |
2005.04.19 |
申请号 |
US20010034279 |
申请日期 |
2001.12.28 |
申请人 |
MICREL, INC. |
发明人 |
HUSHER JOHN DURBIN |
分类号 |
H01L21/44;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L23/528;H01L29/00;H01L29/40;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|