| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma apparatus and a manufacturing method of semiconductor device for controlling film forming temperature with higher accuracy, at the formation of various kinds of films while a semiconductor substrate is cooled with the cooling gas. SOLUTION: The raw material gas is introduced into a reaction chamber to generate plasma, and a substrate support part 1, on which a semiconductor substrate as the processing object is placed, is arranged within the reaction chamber in the plasma processing apparatus provided for the plasma processing. In a region X to which the semiconductor substrate of the substrate support part 1 is placed, a cooling means is provided to cool the semiconductor substrate with the cooling gas. In the external side of the region X, a convex part 7 is provided to control displacement of the semiconductor substrate. The region X, in which the semiconductor substrate of the substrate support part 1 is placed, is formed with a material having a thermal conductivity higher than that of the material used to form the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI |
