| 摘要 |
This invention relates to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( 10, 110, 210 ) is formed having a substrate ( 12, 112, 212 ) and a charge dissipation layer ( 20, 120, 220 ), and a patterned imageable relief layer, ( 16, 116, 216 ) formed on a surface ( 14, 114, 214 ) of the substrate ( 10, 110, 210 ) using radiation. The template ( 10, 110, 210 ) is used in the fabrication of a semiconductor device ( 344 ) for affecting a pattern in the device ( 344 ) by positioning ( 338 ) the template ( 10, 11, 210 ) in close proximity to semiconductor device ( 344 ) having a radiation sensitive material ( 334 ) formed thereon and applying a pressure ( 340 ) to cause the radiation sensitive material to flow into the relief image present on the template ( 10, 110, 210 ). Radiation ( 342 ) is then applied through the template ( 10, 110, 210 ) to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template ( 10, 110, 210 ) is then removed to complete fabrication of semiconductor device ( 344 ).
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