发明名称 |
Reduced cap layer erosion for borderless contacts |
摘要 |
A method of forming borderless contacts and a borderless contact structure for semiconductor devices. A preferred embodiment comprises using a second etch selectivity material disposed over a first etch selectivity material to preserve the first etch selectivity material during the etch processes for the various material layers of the semiconductor device while forming the borderless contacts.
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申请公布号 |
US6890815(B2) |
申请公布日期 |
2005.05.10 |
申请号 |
US20030655199 |
申请日期 |
2003.09.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FALTERMEIER JOHNATHAN;STEPHENS JEREMY;DOBUZINSKY DAVID;CLEVENGER LARRY;NAEEM MUNIR D.;YU CHIENFAN;NESBIT LARRY;DIVAKARUNI RAMA;MALDEI MICHAEL |
分类号 |
H01L21/60;H01L21/8242;H01L29/76;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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