| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor substrate wherein sufficiently practical epitaxial growth can be achieved by inhibiting surface roughness such as hillocks and terraces that are undesirable at device manufacturing when performing epitaxial growth of a nitride crystal layer on the substrate. SOLUTION: The group III-V nitride semiconductor substrate comprises a group III-V nitride single crystal and has a smooth surface. The average valueθ(deg) of the angle formed by the substrate surface and a low-index plane which is nearest to the substrate surface measured at any given points within the substrate plane and the deviation±α(deg) of the measured angle againstθsatisfy the relation:θ>α. COPYRIGHT: (C)2005,JPO&NCIPI |
