METHOD FOR PROCESSING TARGET OBJECT

摘要

A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.