| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance formation accuracy of a lateral quantum confining structure while controllability of the lateral quantum confining structure is secured. <P>SOLUTION: A carrier confining layer 12 is embedded in a surface layer of a semiconductor substrate 11, an ultrasonic wave generating part 13 is formed on the semiconductor substrate 11 in which the carrier confining layer 12 is embedded, and the ultrasonic wave generating part 13 generates a surface acoustic wave which generates the lateral quantum confining structure in the carrier confining layer 12 and the semiconductor layer 11. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
