RESIST DEVELOPMENT METHOD AND DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a resist development method and a device for realizing highly precise fine pattern formation in a process for manufacturing a semiconductor device such as a super-LSI. SOLUTION: In this resist development method for forming the fine pattern of a resist film on a substrate, a resist film is formed with chemical amplification system resist, and an alternating electric field is applied to a resist film on the substrate after an exposure process to expose the resist film and before the resist development process. COPYRIGHT: (C)2005,JPO&NCIPI