| 摘要 |
A tunnel junction device ( 102 ) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer ( 106 ) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer ( 104 ) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction ( 110 ).
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