发明名称 SEMICONDUCTOR DEVICE
摘要 <p>Formation of a Cu film on a fine pattern provided with a Cu diffusion preventing film, in which the surface of the Cu diffusion preventing film over a substrate to be treated is cleaned according to the cleaning method using a supercritical medium and in which further, Cu film formation using a supercritical medium is carried out to thereby achieve formation of void-free Cu film with high adhesion to the fine pattern. In particular, the above is accomplished through a substrate processing method characterized by comprising the first step of feeding a first treatment medium containing a supercritical medium onto a substrate to be treated so as to clean a metallic film lying at the surface of the substrate to be treated and the second step of feeding a second treatment medium containing the supercritical medium onto the substrate to thereby form a Cu film.</p>
申请公布号 KR20050094053(A) 申请公布日期 2005.09.26
申请号 KR20057013741 申请日期 2005.07.26
申请人 TOKYO ELECTRON LIMITED;KONDOH EIICHI 发明人 KONDOH EIICHI;VEZIN VINCENT;KUBO KENICHI;KUREISHI YOSHINORI;OHTA TOMOHIRO
分类号 C23C18/02;C23C18/04;C23C18/18;C25D7/12;H01L21/304;H01L21/768;(IPC1-7):H01L21/205 主分类号 C23C18/02
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