Multi-beam semiconductor laser element

摘要

A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device ( 40 ) is a GaN base multi-beam semiconductor laser device provided with four laser stripes ( 42 A, 42 B, 42 C and 42 D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions ( 42 A to 42 D) are provided with a p-type common electrode ( 48 ) on a mesa structure ( 46 ) which is formed on a sapphire substrate ( 44 ), and have active regions ( 50 A, 50 B, 50 C and 50 D) respectively. Two n-type electrodes ( 52 A and 52 B) are provided on an n-type GaN contact layer ( 54 ) and located as common electrodes opposite to the p-type common electrode ( 48 ) on both sides of the mesa structure ( 46 ). The distance A between the laser stripe ( 42 A) and the laser stripe ( 42 D) is no larger than 100 mum. The distance B₁ between the laser stripe ( 42 A) and the n-type electrode ( 52 B) is no larger than 150 mum while the distance B₂ between the laser stripe ( 42 D) and the n-type electrode ( 52 A) is no larger than 150 mum.