发明名称 METHOD OF MAKING TANTALUM LAYER AND APPARATUS USING TANTALUM LAYER
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of making a tantalum region composed of two phases. <P>SOLUTION: The method of making a tantalum structure includes, creating (194) a tantalum layer (230, 330, 430, 530) disposed on a first layer region (224, 324, 524) of a first layer (222, 420) and on a second layer region of a second layer (220). The tantalum layer has a substantially bcc-phase (body-centered-cubic phase) tantalum region (234, 334, 434, 534) on the first layer region, and a non-bcc-phase tantalum region (232, 332, 432, 532) on the second layer region. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005298975(A) 申请公布日期 2005.10.27
申请号 JP20050116413 申请日期 2005.04.14
申请人 HEWLETT-PACKARD DEVELOPMENT CO LP 发明人 FARTASH ARJANG
分类号 C23C14/14;B32B15/04;B41J2/14;C23C14/02;C23C14/16;C23C16/06;H01G4/33;H01G13/00;H01L21/285;H01L21/768;(IPC1-7):C23C14/14 主分类号 C23C14/14
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