发明名称 |
Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device |
摘要 |
A first film made of silicon carbide is formed over a substrate. The surface of the first film is exposed to an oxidizing atmosphere to oxidize the surface layer of the first film. The surface of the first film is made in contact with chemical which makes the surface hydrophilic. On the hydrophilic surface of the first film, a second film is formed which is an insulating film made of a low dielectric constant insulating material having a relative dielectric constant of 2.7 or smaller or an insulating film made by a coating method. A sufficient adhesion property is obtained when a film made of low dielectric constant insulating material is formed on an insulating film made of silicon carbide having a small amount of oxygen contents.
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申请公布号 |
US2005242440(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20040899045 |
申请日期 |
2004.07.27 |
申请人 |
FUJITSU LIMITED |
发明人 |
OWADA TAMOTSU;WATATANI HIROFUMI;SUGIMOTO KEN;FUKUYAMA SHUN-ICHI |
分类号 |
H01L23/522;H01L21/314;H01L21/768;H01L23/48;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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