发明名称 METHOD OF MANUFACTURING PRINTED TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To obtain a high-quality printed transistor without providing a physical sealing means on the transistor. SOLUTION: A contact pair 240 and 250 is formed on a substrate (e.g. 220) in such a manner as to sandwich a channel region 201 in between. Moreover, at least either one of a modifier coating 221 covering the substrate and modifier coatings 241 and 251 covering the contact pair is formed in the channel region 201. A semiconductor printing fluid 260' is deposited on a receiving surface 202 containing at least a part of the modifier coatings 221, 241 and 251, and it is dried. Therefore, a semiconductor active region is formed on a part of the channel region 201 and the contact pair. Since the materials or the like of the modifier coatings 221, 241, and 251 are selected according to the surface energy distribution to be realized in such a manner that the surface energy distribution in which the surface energy of the modifier coating 221, for example, is larger than or substantially equal to the surface energy of the modifier coatings 241 and 251 appears on the receiving surface, the semiconductor active region that is relatively thick can be formed without causing interruptions or the like. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005354051(A) 申请公布日期 2005.12.22
申请号 JP20050161181 申请日期 2005.06.01
申请人 PALO ALTO RESEARCH CENTER INC 发明人 CHABINYC MICHAEL L;ARIAS ANA C
分类号 H01L51/05;H01L21/208;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01L31/20;H01L51/00;(IPC1-7):H01L21/336 主分类号 H01L51/05
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