Formation of stable dielectric nanomaterial by controlled growth on a semiconductor for the fabrication of a range of capacitance devices such as dynamic random access memory

摘要

The formation of dielectric nanomaterial for capacitance devices above a semiconductor or conductor material that consists of a cycle of molecular reactions and saturation of the surfaces comprises the following successive and indissociable stages : (A) growth with a factor alpha 0 a quarter of a monolayer MC0 of the quaternary compound containing the oxynitrides of the isotopes of germanium, zirconium, hafnium, lutetium, lanthanides and titanium; (B) growth with a factor alpha 1 a monolayer MC1 of the binary or ternary or quaternary compound containing the oxides and oxynitrides with a base of the isotopes of zirconium, hafnium, lutetium, lanthanides and titanium; and (C) growth with a factor alpha 2 a quarter of a monolayer MC2 of the quaternary compound containing the oxynitrides with a base of the isotopes of zirconium, hafnium, lutetium, lanthanides and titanium.