| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a depletion layer which spreads between adjoining elements is restrained, and mutual affection of the elements is eliminated, so that spacing between semiconductor elements is narrowed, integration degree is increased, and flexibility of circuit lay out is enlarged. <P>SOLUTION: In the case that resistance elements or MOSFET elements which are formed by single conduction type adjoin on a half-insulating substrate, a guard layer of the same or an inverse conduction type is formed between adjoining both of the elements, and variation of electrical property is restrained under impact of a generated electric field when potential difference generates. Furthermore, one end of the guard layer can be also grounded. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
