| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device provided with a test mode of measuring characteristics of selection transistors. <P>SOLUTION: The semiconductor storage device is provided with a memory cell array wherein a NAND cell unit is constituted of a plurality of electrically rewritable and nonvolatile memory cells connected in series and first and second selection transistors connected to both ends of the NAND cell unit. The semiconductor storage device has the test mode. In the test mode, pass voltages which turn on memory cells independently of data are applied to control gates of all memory cells in the NAND cell unit with an external voltage simultaneously applied to a gate of at least one of the first and second selection transistors to turn on the selection transistor, and a read current passing through the NAND cell unit is detected to measure characteristics of at least one of the first and the second selection transistors driven by the external voltage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
