| 发明名称 | Multiple layer FePt structure | ||
| 摘要 | A method involves depositing a seed layer comprising at least A1 phase FePt. A main layer of A1 phase FePt is deposited over the seed layer. The main layer includes FePt of a different stoichiometry than the seed layer. The seed and main layers are annealed to convert the A1 phase FePt to L10 phase FePt. The annealing involves heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers. | ||
| 申请公布号 | US9520151(B2) | 申请公布日期 | 2016.12.13 |
| 申请号 | US201313836521 | 申请日期 | 2013.03.15 |
| 申请人 | Seagate Technology LLC | 发明人 | Qui Jiaoming;Chen Yonghua;Ju Ganping;Nolan Thomas P. |
| 分类号 | G11B5/84;C21D1/26;G11B5/66;G11B5/64;B32B15/01;G11B5/65;G11B5/73;C21D9/00;C22C5/04;C22C30/00;C22C38/00;C21D8/12 | 主分类号 | G11B5/84 |
| 代理机构 | Hall Estill Attorneys at Law | 代理人 | Hall Estill Attorneys at Law |
| 主权项 | 1. A method comprising: depositing a seed layer comprising at least A1 phase FePt; depositing a main layer of A1 phase FePt on the seed layer, wherein the main layer comprises FePt of a different stoichiometry than the seed layer; and annealing the seed and main layers to convert the A1 phase FePt to L10 phase FePt, the annealing step comprising heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers, the main and seed layer forming a graded FePt structure of varying stoichiometry responsive to said annealing. | ||
| 地址 | Cupertino CA US | ||