| 摘要 |
PROBLEM TO BE SOLVED: To solve problems that a notch formed in a semiconductor wafer is passed through from its backside to its surface, and by the notch to the surface of the semiconductor wafer, the scattering of its solvent is generated in its resist removing process, and further, the variations of its patterns are generated in the case of its immersion exposure, and moreover, the deterioration of the adhesiveness of its protective tape, etc. are generated in its protective-tape separating process. SOLUTION: There is provided a semiconductor wafer having its notch formed out of a groove which is not passed through from its backside to its front surface. Consequently, since the notch is not exposed to the front surface of the semiconductor wafer, the faults caused by the notch can be prevented from being generated when executing miscellaneous processes. COPYRIGHT: (C)2006,JPO&NCIPI |
