发明名称 |
Method for the patterned, selective metallization of a surface of a substrate |
摘要 |
The present invention provides a method for the patterned metallization of a surface of a substrate, comprising the steps of preheating the substrate to a temperature which is below a deposition temperature of a predetermined metal dissolved in a fluid provided above the surface, and performing patterned deposition of the predetermined metal in predetermined regions on the surface of the substrate by locally increasing the temperature to above the deposition temperature.
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申请公布号 |
US6998346(B2) |
申请公布日期 |
2006.02.14 |
申请号 |
US20030675634 |
申请日期 |
2003.09.30 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
SCHMID GUENTER |
分类号 |
H01L21/44;C23C18/16;H01L21/288;H01L21/60;H01L21/768;H05K3/18 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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