发明名称 Use of doped silicon dioxide in the fabrication of solar cells
摘要 In one embodiment, a method of forming doped regions in a substrate of a back side contact solar cell includes the steps of depositing a first doped oxide layer on a back side of a substrate, depositing a first undoped oxide layer over the first doped oxide layer, diffusing a first dopant from the first doped oxide layer into the substrate to form a first doped region in the substrate, and diffusing a second dopant into the substrate by way of a front side of the substrate, wherein the diffusion of the first dopant and the second dopant into the substrate are performed in-situ. The method may further include the steps of patterning the first doped and undoped oxide layers to expose portions of the back side of the substrate and depositing a second doped and undoped oxide layers on the back side of the substrate.
申请公布号 US6998288(B1) 申请公布日期 2006.02.14
申请号 US20040946564 申请日期 2004.09.21
申请人 SUNPOWER CORPORATION 发明人 SMITH DAVID D.;CUDZINOVIC MICHAEL J.;MCINTOSH KEITH R.;MEHTA BHARATKUMAR GAMANLAL
分类号 H01L21/00 主分类号 H01L21/00
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