| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a flattening and polishing method by which higher flattening and polishing can be established for CMP polishing, and to provide a method of manufacturing a semiconductor device using the flattening and polishing method. <P>SOLUTION: This method is used to flatten and polish a target wafer. A polishing slurry containing abrasive grains and an encapsulated surfactant 36 with a coated surface is employed to flatten the surface to be polished. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
