| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of precisely controlling a life time. SOLUTION: A PIN diode 2 comprises an anode electrode 6, a P layer 3, an I layer 4, an N layer 5, and a cathode electrode 7. In a region nearby a pn junction where the density of carriers injected in a forward bias state is relatively high or a region nearby an n+n junction, a polysilicon film is formed as a predetermined film having a crystal defect as a center of recombination. COPYRIGHT: (C)2009,JPO&INPIT |
