| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing capacity of gate overlap, and a manufacturing method thereof. SOLUTION: The semiconductor device 21 is provided with: a columnar body 3 formed on a semiconductor substrate 1; a distal end side impurity diffusion layer 5 formed on a distal end 3b of the columnar body 3; a base end side impurity diffusion region 4 formed on a base end 3a of the columnar body 3; a gate insulating film 7 formed on an outer peripheral surface 3c of the columnar body 3; a distal end side insulating layer 10 formed on the outer peripheral surface 3c so as to cover the distal end side impurity diffusion region 5; a base end side insulating layer 9 formed on the outer peripheral surface 3c so as to cover the base end side impurity diffusion region 4; and a gate electrode 8 disposed between the distal end side insulating layer 10 and the base end side insulating layer 9. COPYRIGHT: (C)2009,JPO&INPIT |
