| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
To improve a tradeoff between ON voltage and ON/OFF loss while maintaining short-circuit tolerance, provided is a semiconductor device including an IGBT element; a super junction transistor element connected in parallel with the IGBT element; and a limiting section that limits a voltage applied to a gate terminal of the IGBT element more than a voltage applied to a gate terminal of the super junction transistor element. |
| 申请公布号 |
US2017047320(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615335460 |
申请日期 |
2016.10.27 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NAITO Tatsuya;OTSUKI Masahito |
| 分类号 |
H01L27/06;H02H3/08;H01L29/78;H01L29/423;H01L29/739;H01L29/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an IGBT element; a super junction transistor element connected in parallel with the IGBT element; and a limiting section that limits a gate voltage applied to a gate terminal of the IGBT element more than a gate voltage applied to a gate terminal of the super junction transistor element. |
| 地址 |
Kanagawa JP |
