主权项 |
1. A magnetron sputter ion plating apparatus comprising;
a chamber with a top and a bottom, at least one substrate to be coated, said at least one substrate mounted on a holder located in the chamber and magnetic field means located in the chamber, the magnetic field means comprising at least two magnetrons and/or magnet assemblies each having an inner portion and an outer portion of opposite polarity, the magnetrons or magnet assemblies arranged as a closed field such that the outer portion of at least one of the magnetrons or magnet assemblies has a first polarity and an adjacent magnetron or magnet assembly has an outer portion with opposite polarity so that magnetic field lines extend between said magnetrons and/or magnet assemblies and substantially prevent the escape of electrons from the system between the magnetrons and/or magnet assemblies, at least two magnetrons with outer portions having opposing polarities are provided with targets of the same material and said at least two magnetrons are initially operated simultaneously for a period of time to perform a cleaning action and then apply a layer of material deposited from the said targets of the same material onto the said at least one substrate wherein the chamber is provided with side walls, a top and a bottom, the said at least two magnetrons and/or magnet assemblies are located at the side walls of the chamber and arranged around the holder on which the at least one substrate is located, which has a central position such that the magnetrons and/or magnet assemblies are substantially equally angularly spaced in a polygon or ring around the holder and the at least one substrate, said holder is provided to be rotated about a first axis which extends from the top of the chamber to the bottom of the chamber and a plate is provided at floating potential and located at only the top of the chamber and extends along a second axis which is perpendicular to the said first axis and a second plate, spaced from the first plate, is provided at floating potential and located only at the bottom of the chamber and extends along a third axis which is parallel with the second axis and the said at least one substrate is at a negative electrical potential of up to −1000 Volts. |