发明名称 METHOD OF MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT
摘要 Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.
申请公布号 US2017070033(A1) 申请公布日期 2017.03.09
申请号 US201615225048 申请日期 2016.08.01
申请人 FUJI XEROX CO., LTD. 发明人 HAYAKAWA Junichiro;MURAKAMI Akemi;KONDO Takashi;JOGAN Naoki;SAKURAI Jun
分类号 H01S5/227;H01S5/183;H01S5/323;H01S5/026 主分类号 H01S5/227
代理机构 代理人
主权项 1. A method of manufacturing a surface-emitting semiconductor laser element comprising: a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror of a first conductivity type, a rough surface formation layer on the first semiconductor multilayer reflection mirror, an active region on the rough surface formation layer, a second semiconductor multilayer reflection mirror of a second conductivity type on the active region, and a current confining layer that is adjacent to the active region; a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed; a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure; a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer; and a fifth process of forming an insulating film on the region including the rough surface region.
地址 Tokyo JP