发明名称 |
METHOD OF MANUFACTURING SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT |
摘要 |
Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region. |
申请公布号 |
US2017070033(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
US201615225048 |
申请日期 |
2016.08.01 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
HAYAKAWA Junichiro;MURAKAMI Akemi;KONDO Takashi;JOGAN Naoki;SAKURAI Jun |
分类号 |
H01S5/227;H01S5/183;H01S5/323;H01S5/026 |
主分类号 |
H01S5/227 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a surface-emitting semiconductor laser element comprising:
a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror of a first conductivity type, a rough surface formation layer on the first semiconductor multilayer reflection mirror, an active region on the rough surface formation layer, a second semiconductor multilayer reflection mirror of a second conductivity type on the active region, and a current confining layer that is adjacent to the active region; a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed; a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure; a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer; and a fifth process of forming an insulating film on the region including the rough surface region. |
地址 |
Tokyo JP |