Semiconductor device

摘要

The semiconductor device of the present invention includes an insulating layer, a copper wiring for wire connection formed on the insulating layer, a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper, a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface for a wire, and a side protecting layer covering a side surface of the copper wiring, wherein the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer.

主权项

1. A semiconductor device comprising:
a semiconductor chip including:
a semiconductor substrate;a multilayer wiring structure disposed on the semiconductor substrate, the multilayer wiring structure including at least one insulating layer and at least one wiring layer;a copper wiring for wire connection formed on the at least one insulating layer;a shock absorbing layer formed on an upper surface of the copper wiring, the shock absorbing layer being made of a metallic material with a hardness higher than copper;a bonding layer formed on the shock absorbing layer, the bonding layer having a connection surface;a side protecting layer covering a side surface of the copper wiring from an upper end of the side surface to a lower end of the side surface, anda barrier film interposed between the at least one insulating layer and the copper wiring; a first lead on which the semiconductor chip is mounted; a second lead separated from the first lead; and a bonding wire bonded to the connection surface of the bonding layer and the second lead, wherein the barrier film has an end surface positioned farther inside than the side surface of the copper wiring such that a level difference along a surface of the semiconductor substrate is formed between the end surface of the barrier film and the side surface of the copper wiring, the side protecting layer has a thickness thinner than a distance from the upper surface of the copper wiring to the connection surface of the bonding layer, a portion of the side protecting layer is disposed in the level difference while reaching the at least one insulating layer, and the at least one wiring layer is disposed directly beneath a connection portion of the connection surface to which the bonding wire is bonded.