| 发明名称 |
SINGLE CRYSTAL SILICON CONTACT FOR INTEGRATED CIRCUITS AND METHOD FOR MAKING SAME |
| 摘要 |
The method for making a single crystal silicon contact for integrated circuits is described. The epitaxial contact is self-patterning and is formed by coherent growth on a surface of monocrystalline silicon for protecting and contacting said surface.
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| 申请公布号 |
US3717514(A) |
申请公布日期 |
1973.02.20 |
| 申请号 |
USD3717514 |
申请日期 |
1970.10.06 |
| 申请人 |
MOTOROLA INC,US |
发明人 |
BURGESS R,US |
| 分类号 |
H01L21/00;H01L21/285;H01L23/29;H01L23/485;(IPC1-7):H01L7/36 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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