| 摘要 |
1308939 Sputtering apparatus INTERNATIONAL BUSINESS MACHINES CORP 5 Nov 1970 [26 Nov 1969] 52609/70 Heading C7F [Also in Division H1] In manufacture of an IGFET, a S/C wafer of desired conductivity e.g. p-type Si is masked with SiO 2 which is etched over photo-resist into source and drain windows, into which P is diffused to derive underlying N-type areas. Gate dielectric is formed by etching the oxide over the source-drain channel and reoxidizing to a predetermined thickness, which is again doped with P. Electrodes of e.g. Al are evaporated on the source, drain, and gate after which the device is annealed. Thereafter SiO 2 or Si 3 N 4 en-capsulation is sputtered by RF on the wafer 50 which is placed on substrate holder 42 supported in a chamber 10 whose base-plate 12 is removable and whose top-plate 11 carries a fluid coolant structure 32 within post 24, also carrying electrode structure 16 comprising target 20 of SiO 2 or Si 3 N 4 adjacent to cathode 22, insulated by ceramic seal 26 from post 24, which carries earthed shield 30 enclosing the cathode. The chamber may be filled with gas e.g. argon through valve 14 and maintained at desired pressure by pump 17. RF power is applied to cathode 22 over structure 32, and coolant or heating means may be positioned adjacent to the substrate holder 42, whose support and base-plate 12 act as anode to a gallium coated surface of the wafer. The resultant discharge is concentrated by electromagnets 44. After sputtering the device is annealed in e.g. N 2 for passivation and stabilisation. |
